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All relevant trace contaminants should have an MDL determined from a regression analysis of a calibration curve that is equal to
Film deposition equipment (chemical vapor deposition [CVD] and physical vapor deposition [PVD])
bumps or waves on the wafer surface that have dominant spatial wavelengths less than 20 mm and vary in peak-to-valley (P-V) height from a few nanometers to several hundred nanometers
This Guide contains the following component:
M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers StdPbc-0922 All relevant trace contaminants shouldThis Specification defines the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography, buried layer, and buried layer pattern after the deposition of the epitaxial layer. This Specification is intended to be used with the polished wafer specification (SEMI M1) and the epitaxial wafer specification (SEMI M2), which define the properties of the substrate and the epitaxial layer, respectively.
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