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IGW25N120H3 1200V, 25A IGBT Transistor, Infineon. new Thermal resistance approx

SKU: 46817697868

4.0
USD18.00 USD64.00

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USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Aug 18 - Aug 23

Description

Thermal resistance approx

Dual N-channel mosfets are housed in the leaded SOT1121A package

top of the range model in the new line of high ruggedness RF power mosfets

priced singly

IGW25N120H3 1200V, 25A IGBT Transistor, Infineon. new Thermal resistance approxThe IGW25N120H3 is a high voltage IGBT in the leaded TO247 package. Rated at 1200V and 25A. Features low switching losses and Trenchstop technology. Genuine Infineon parts supplied. Supplied singly. Please see the datasheet for more details.

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